发明名称 |
Silicon on insulator field effect transistor having shared body contact |
摘要 |
Silicon on insulator (SOI) field effect transistors (FET) with a shared body contact, a SRAM cell and array including the SOI FETs and the method of forming the SOI FETs. The SRAM cell has a hybrid SOI/bulk structure wherein the source/drain diffusions do not penetrate to the underlying insulator layer, resulting in a FET in the surface of an SOI layer with a body or substrate contact formed at a shared contact. FETs are formed on SOI silicon islands located on a BOX layer and isolated by shallow trench isolation (STI). NFET islands in the SRAM cells include a body contact to a P-type diffusion in the NFET island. Each NFET in the SRAM cells include at least one shallow source/drain diffusion that is shallower than the island thickness. A path remains under the shallow diffusions between NFET channels and the body contact. The P-type body contact diffusion is a deep diffusion, the full thickness of the island. Bit line diffusions shared by SRAM cells on adjacent wordlines may be deep diffusions.
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申请公布号 |
US2003218198(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20030460717 |
申请日期 |
2003.06.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DACHTERA WILLIAM R.;JOSHI RAJIV V.;RAUSCH WERNER A. |
分类号 |
H01L27/11;G11C11/412;H01L21/8244;H01L27/12;H01L29/786;(IPC1-7):H01L27/108;H01L29/76 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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