| 摘要 |
A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40-60 mum, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4-6 mum. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.
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