发明名称 |
Semiconductor light emitting element and method for manufacturing the same |
摘要 |
A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength lambda permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1 lambda to 3 lambda on the side surfaces.
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申请公布号 |
US2003218172(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20030407867 |
申请日期 |
2003.04.04 |
申请人 |
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发明人 |
SUGAWARA HIDETO;WATANABE YUKIO;ABE HIROHISA;KONNO KUNIAKI |
分类号 |
H01L21/302;H01L21/205;H01L21/306;H01L33/10;H01L33/16;H01L33/22;H01L33/30;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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