| 摘要 |
A hetero-bipolar transistor according to the present invention enhances reliability that relates to the breaking of wiring metal. The transistor comprises a semiconductor substrate, a sub-collector layer formed on a (100) surface of the substrate, a collector mesa formed on the sub-collector layer, and an emitter contact layer. The transistor further includes a collector electrode and wiring metal connected to the collector electrode. The edge of the sub-collector layer forms a step S, the angle of which is in obtuse relative to the substrate. Therefore, the wiring metal traversing the step S bends in obtuse angle at the step S, thus reducing the breaking of the wiring metal.
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