发明名称 |
SOI-LDMOS device with integral voltage sense electrodes |
摘要 |
The present invention provides a semiconductor device of the SOI-LDMOS type in which the field plate is divided into a plurality of electrically isolated sub-field plates. At least two of the divided sub-field plates are connected to external circuits for reading their respective output voltages. By connecting a first external circuit and a second external circuit having specific components, one is configured for determining an instantaneous output voltage and the other is configured for determining a change in output voltage as a function of time. Power is disconnected from the semiconductor device if either the instantaneous voltage or the derivative of voltage over time exceeds an established value.
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申请公布号 |
US2003218211(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20020152235 |
申请日期 |
2002.05.21 |
申请人 |
KONIKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
JOHN PETRUZZELLO;BENOIT DUFORT;THEODORE LETAVIC |
分类号 |
H01L29/786;H01L27/12;H01L29/06;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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