| 摘要 |
1,196,515. Semi-conductor devices. C.I.T. COMPAGNIE INDUSTRIELLE DES TELECOMMUNICATIONS. 15 March, 1968 [18 April, 1967], No. 12746/68. Heading H1K. A plurality of diodes is formed in a common substrate of material of one conductivity type by depositing an insulating layer over the substrate, forming apertures of the same or different sizes in the layer to expose areas of the substrate, depositing a dopant of opposite type in each aperture and then applying electric pulses between the dopant in individual apertures and the substrate to form diode junctions of similar or differing characteristics which may subsequently be divided from the substrate. In the embodiment tunnel diodes are formed on a substrate of heavily doped N-type germanium, silicon or gallium arsenide using silicon dioxide as the insulator and vapour deposited aluminium as dopant. After pulsing, elements containing one or a group of junctions are separated from the substrate by scribing. |
