发明名称 |
Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung |
摘要 |
A method of making a semiconductor device is described which combines ion implantation with another process of forming an impurity-containing semiconductor region. In particular, a surface-adjoining region of a semiconductor is formed in such manner that the portion of that region adjacent the surface is formed by a process other than ion implantation, whereas a surface remote or buried portion of that region which defines a P-N junction is formed by ion implantation. This combination of steps yields improved semiconductor devices. |
申请公布号 |
DE2058442(A1) |
申请公布日期 |
1971.06.09 |
申请号 |
DE19702058442 |
申请日期 |
1970.11.27 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
ANTHONY BEALE,JULIAN ROBERT;ANTHONY KERR,JOHN |
分类号 |
H01L21/00;H01L23/485 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|