HIGH-FREQUENCY POWER SEMICONDUCTOR MODULE WITH A HOLLOW HOUSING AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a high-frequency power semiconductor module (1) having a hollow housing (3) which is made of three modules: a first module (8) which has a housing frame (6) which is open towards the top and the bottom, comprising horizontally arranged flat conductors (5); a second module (9) having a chip island (4) as a heat sink with at least one high-frequency semiconductor component (2), whereby the second module (9) forms the base of the hollow housing (3); and a third module (10) comprising the housing cover (7).