发明名称 METHOD FOR PRODUCING ROUGH SURFACE ON SILICON SUBSTRATES FOR THEIR ANODIC ETCHING
摘要 FIELD: silicon substrates with surfaces used as ion emitters in analytical devices such as mass-spectrometers. SUBSTANCE: method involves anodic etching in electrolyte incorporating aqueous solution of hydrofluoric acid and alcohol at current density not over 4 mA/sq. cm and also I2 or iodine- containing compound dissociating in electrolyte to produce iodide-ions, this being followed by subjecting surface obtained to optical radiation in water environment at intensity lower than destruction threshold of mentioned surface. Proposed electrolyte compound for anodic etching of silicon substrates has in its composition aqueous solution of hydrofluoric acid and alcohol and incorporates in addition I2 or iodine-containing compound dissociating in electrolyte to produce iodide-ions with definite proportion of ingredients. Silicon substrates produced by this method are noted for no or low porosity, high degree of roughness, and high ionizing effectiveness of molecules; they maintain their chemical stability when stored under natural conditions. EFFECT: enhanced sensitivity of analyses using methods of mass-spectrometry and ion mobility spectrometry. 8 cl, 9 dwg
申请公布号 RU2217840(C1) 申请公布日期 2003.11.27
申请号 RU20030101425 申请日期 2003.01.21
申请人 发明人 ALIMPIEV S.S.;NIKIFOROV S.M.;GRECHNIKOV A.A.;KARAVANSKIJ V.A.;SANNER ZHAN ARNE
分类号 H01L21/3063;(IPC1-7):H01L21/306 主分类号 H01L21/3063
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