发明名称 |
High power-low noise microwave GaN heterojunction field effet transistor |
摘要 |
A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.
|
申请公布号 |
US2003218183(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20020313374 |
申请日期 |
2002.12.06 |
申请人 |
MICOVIC MIROSLAV;ANTCLIFFE MIKE;HUSSAIN TAHIR;HASHIMOTO PAUL |
发明人 |
MICOVIC MIROSLAV;ANTCLIFFE MIKE;HUSSAIN TAHIR;HASHIMOTO PAUL |
分类号 |
H01L21/285;H01L21/335;H01L29/20;H01L29/778;(IPC1-7):H01L31/032;H01L21/336 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|