| 发明名称 |
Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
| 摘要 |
The allows: Ta-Si, Nb-Si, TaN-Si, NbN-Si and variants are used as enhanced powder anode substrates for electrolytic capacitor anodes (sintered powder masses) with dielectric oxide formation at walls of the internal pores.
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| 申请公布号 |
US2003217619(A1) |
申请公布日期 |
2003.11.27 |
| 申请号 |
US20020074073 |
申请日期 |
2002.05.21 |
| 申请人 |
H.C. STARCK, INC. |
发明人 |
SIMKINS LEAH;CONLON ANASTASIA |
| 分类号 |
C22C1/04;H01G9/052;(IPC1-7):C22C29/16 |
主分类号 |
C22C1/04 |
| 代理机构 |
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