EEPROM MEMORY MATRIX AND METHOD FOR PROTECTING AN EEPROM MEMORY MATRIX

摘要

The column lines of the memory matrix are alternatively used as detector lines. The selected detector lines are, together with the relevant column line, respectively impinged upon with a precharge voltage prior to the read-out of the memory columns. If a detector line loses its precharge level during the read-out of the memory cells, an incidence of light runs out and a corresponding alarm function is triggered. Preferably, adjacent column lines are connected to the respectively selected column lines for data transmission as detector lines.