MULTILAYER STRUCTURE FOR SHALLOW P-N JUNCTION SILICON STRUCTURE

摘要

FIELD: electronic engineering; contact systems for p-n semiconductor devices. SUBSTANCE: multilayer contact system has ohmic contact based on silicides of platinum- group metals, barrier layer of titanium nitride, and adhesive titanium layer. Adhesive layer is sequentially covered with contacting layer and contact layer of electrically deposited gold. Contact system is characterized in that barrier layer of titanium nitride synthesized by thermionic method has titanium-to-nitrogen proportion of 2 : 1 and its optimal thickness meets definite mathematical relationship which greatly reduces cubic resistance of this barrier layer. EFFECT: enhanced thermal and radiation resistance of devices using proposed contact system. 1 cl, 3 dwg