发明名称 Memory device sequencer and method supporting multiple memory device clock speeds
摘要 A sequence state matrix has a plurality of time slots for storing a plurality of memory device signals. The memory device signals are loaded into the matrix by a sequencer load unit, which loads the memory device signals at locations in the matrix corresponding to the times that the signals will be coupled to a memory device. The sequencer load unit loads the signals into the matrix at a rate corresponding to a frequency of a system clock signal controlling the operation of the electronic system. A first in, first out ("FIFO") buffer receives the memory device signals from the sequence state matrix at a rate corresponding to the frequency of the system clock signal. A command selector transfers the memory device signals from the FIFO buffer to the memory device at a rate corresponding to the frequency of a memory clock signal controlling the operation of the memory device.
申请公布号 US2003221078(A1) 申请公布日期 2003.11.27
申请号 US20020155668 申请日期 2002.05.24
申请人 JEDDELOH JOSEPH M. 发明人 JEDDELOH JOSEPH M.
分类号 G06F12/00;G06F13/16;(IPC1-7):G06F12/00 主分类号 G06F12/00
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