发明名称 Plasma chemical vapor deposition apparatus
摘要 A reactor for generating plasma is provided in a vacuum chamber. The reactor has an opening in the direction of a supporting portion for a deposition base material, and the reactor includes an outer housing and a cylindrical inner wall structure that is inserted in the outer housing and is freely attachable and detachable to and from the outer housing. The cleaning of the reactor is performed with respect to the cylindrical inner wall structure that is simpler in structure than the outer housing, and hence the reactor can be cleaned reliably and with ease, thereby making it possible to improve the operational efficiency and the yield rate. The problem of prolonged operation time resulting from the cleaning of the reactor in a plasma chemical vapor deposition apparatus is thus resolved.
申请公布号 US2003217698(A1) 申请公布日期 2003.11.27
申请号 US20030437505 申请日期 2003.05.14
申请人 HIRATSUKA RYOICHI;SATO TAKETOSHI;WATANABE TAKASHI;KONISHI TOSHIHIRO 发明人 HIRATSUKA RYOICHI;SATO TAKETOSHI;WATANABE TAKASHI;KONISHI TOSHIHIRO
分类号 C23C16/26;C23C16/503;C23C16/54;G11B5/84;G11B5/85;(IPC1-7):C23C16/00 主分类号 C23C16/26
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