发明名称 |
FIELD EFFECT TRANSISTOR HAVING A LATERAL DEPLETION STRUCTURE |
摘要 |
A field effect transistor device and a method for making a field effect transistor device are disclosed. The field effect transistor device includes a stripe trench extending from the major surface of a semiconductor substrate (29) into the semiconductor substrate (29) to a predetermined depth. The stripe trench (35) contains a semiconductor material of the second conductivity type to form a PN junction at an interface formed with the semiconductor substrate (29). |
申请公布号 |
WO03085722(A3) |
申请公布日期 |
2003.11.27 |
申请号 |
WO2002US10008 |
申请日期 |
2002.03.29 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
MARCHANT, BRUCE, D. |
分类号 |
H01L21/336;H01L29/06;H01L29/10;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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