发明名称 |
Aqueous dispersion for chemical mechanical polishing |
摘要 |
The object of the present invention is to provide an aqueous dispersion for chemical mechanical polishing which can be polished working film for semiconductor devices and which is useful for STI. The aqueous dispersion for chemical mechanical polishing of the invention is characterized by comprising an inorganic abrasive such as silica, ceria and the like, and organic particles composed of a resin having anionic group such as carboxyl group into the molecular chains. The removal rate for silicon oxide film is at least 5 times, particularly 10 times the removal rate for silicon nitride film. The aqueous dispersion may also contain an anionic surfactant such as potassium dodecylbenzene sulfonate and the like. And a base may also be included in the aqueous dispersion for adjustment og the pH to further enhance the dispersability, removal rate and selectivity. |
申请公布号 |
EP1160300(A3) |
申请公布日期 |
2003.11.26 |
申请号 |
EP20010112145 |
申请日期 |
2001.05.17 |
申请人 |
JSR CORPORATION |
发明人 |
HATTORI, MASAYUKI;KISHIMOTO, HITOSHI;KAWAHASHI, NOBUO |
分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/306;H01L21/3105 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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