Thin film sensor element and method of manufacturing the same

摘要

A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate 1, a rock-salt crystal structure oxide of a conductive NiO 12 is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to &Lang&100&Rang& direction against the substrate surface. By means of a sputtering method, a PZT film 4 is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film 15 is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate 7 having an opening part with an adhesive 20. After a connection electrode 19 is connected, the whole structure is washed with water, thereby removing the KBr substrate 1.