发明名称 |
Method for passivating a semiconductor substrate |
摘要 |
A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps: the substrate (1) is placed in a processing chamber (5) which has specific internal processing chamber dimensions; the pressure in the processing chamber is maintained at a relatively low value; the substrate (1) is maintained at a specific treatment temperature; a plasma (P) is generated by at least one plasma cascade source (3) mounted on the processing chamber (5) at a specific distance (L) from the substrate surface; at least a part of the plasma (P) generated by each source (3) is brought into contact with the substrate surface; and flows of silane and ammonia are supplied to said part of the plasma (P). |
申请公布号 |
EP1365042(A1) |
申请公布日期 |
2003.11.26 |
申请号 |
EP20030076530 |
申请日期 |
2003.05.21 |
申请人 |
OTB GROUP B.V. |
发明人 |
BIJKER, MARTIN DINANT;DINGS, FRANCISCUS CORNELIUS;VAN DE SANDEN, MAURITIUS CORNELIS MARIA;HOMPUS, MICHAEL ADRIANUS THEODORUS;KESSELS, WILHELMUS, MATHIJS, MARIE |
分类号 |
C23C16/42;C23C16/34;C23C16/513;H01L21/318;H01L31/04 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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