发明名称 High temperature resonant integrated microstructure sensor
摘要 A very high temperature sensor of a resonant integrated microstructure having an electrostatic beam driver and an optical fiber pick-up for sensed light from the beam. The high temperature sensor has no components that are vulnerable to temperature up to 600 degrees C. Associated components for detection, processing and driving are remote from the sensor environment. By using different materials in the beam assembly, such as tungsten for the beam, and sapphire for the substrate and the shell, the sensor can withstand temperatures up to 1000 degrees C. Also, optical fiber may be used for long distance connections between processing electronics and the driver in the sensing device, by locating a photo detector just outside, the very high temperature sensing environment and than using optical fiber for sending long distance signals from the processor to the driver photo detector, for eliminating electrical signal-to-noise problems. <IMAGE>
申请公布号 EP1365222(A2) 申请公布日期 2003.11.26
申请号 EP20030077112 申请日期 1998.12.07
申请人 HONEYWELL INC. 发明人 YOUNGNER, DANIEL W
分类号 G01L1/18;G01L9/00;G01P15/097;G01P15/10;B81B3/00;G01L1/10;(IPC1-7):G01L9/00 主分类号 G01L1/18
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