| 摘要 |
1,241,555. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORP. 27 Nov., 1968 [28 Nov., 1967], No. 54012/67. Heading H1K. [Also in Division H3] An avalanche diode oscillator has the diode junction formed by ion implantation, the implanted layer having discrete regions 2 of deeper ion implantation extending into the active region so that the avalanche breakdown is confined to those regions to produce high current density. The avalanche diode is designed to operate at high current densities. The diodes are specially constructed to prevent overheating even for pulsed operation. A P + N N + diode may have an ion implanted P + layer 1 with discrete regions 2 of deeper ion implantation produced by concentrating the ion implantation beam at these regions and increasing the energy of the beam. The active region of the diode is an epitaxial N-type layer 3. The diode has metallic contacts 5, 6 alloyed to the P+ layer 1 and an N+ substrate 4. When a reverse voltage is applied to the P + N junction and when avalanche breakdown occurs the electric field is concentrated between the regions 2 and the substrate 4. The material between the regions 2 acts as a heat sink. |
