发明名称 Method for forming cantilever beam probe card and probe card formed
摘要 A method for forming a cantilever beam probe card on a semiconducting substrate and the probe card fabricated by such method are described. The method utilizes the deposition of two separate metal layers of different metals for forming a cantilever beam and a microprobe for use as a probe needle. A sacrificial, insulating material layer such as oxide or nitride is utilized in-between the metal layers and a semiconducting substrate and is subsequently removed such that the cantilever beams are released from the semiconducting substrate except at a support portion. The present invention cantilever beam probe card formed by the method can be used to probe testing IC devices that have high pin count and fine pitch.
申请公布号 US6651325(B2) 申请公布日期 2003.11.25
申请号 US20020079748 申请日期 2002.02.19
申请人 INDUSTRIAL TECHNOLOGIES RESEARCH INSTITUTE 发明人 LEE CHENG-HONG;LEE HSIN-LI;CHEN YI-SHIAU
分类号 B81B3/00;G01R1/073;G01R3/00;(IPC1-7):H05K3/10 主分类号 B81B3/00
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