发明名称 |
Method for forming cantilever beam probe card and probe card formed |
摘要 |
A method for forming a cantilever beam probe card on a semiconducting substrate and the probe card fabricated by such method are described. The method utilizes the deposition of two separate metal layers of different metals for forming a cantilever beam and a microprobe for use as a probe needle. A sacrificial, insulating material layer such as oxide or nitride is utilized in-between the metal layers and a semiconducting substrate and is subsequently removed such that the cantilever beams are released from the semiconducting substrate except at a support portion. The present invention cantilever beam probe card formed by the method can be used to probe testing IC devices that have high pin count and fine pitch.
|
申请公布号 |
US6651325(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20020079748 |
申请日期 |
2002.02.19 |
申请人 |
INDUSTRIAL TECHNOLOGIES RESEARCH INSTITUTE |
发明人 |
LEE CHENG-HONG;LEE HSIN-LI;CHEN YI-SHIAU |
分类号 |
B81B3/00;G01R1/073;G01R3/00;(IPC1-7):H05K3/10 |
主分类号 |
B81B3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|