发明名称 |
Reduced 1/f noise in MOSFETs |
摘要 |
An improved gate structure for a MOSFET device exhibits a reduced level of 1/f noise or "flicker noise", while maintaining the control of boron penetration into the substrate of the MOSFET device. The gate structure for the MOSFET device includes a gate electrode and a gate oxide layer wherein nitrogen is selectively implanted into the gate oxide/device substrate interface prior to oxidation of the gate oxide layer. The nitrogen is selectively implanted so that the nitrogen is implanted into thin gate oxide regions and masked from thick gate oxide regions so that the benefits of controlling the boron penetration are realized while the 1/f noise is reduced due to the selective implantation of the nitrogen.
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申请公布号 |
US6653679(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20010015411 |
申请日期 |
2001.12.11 |
申请人 |
NEWPORT FAB, LLC |
发明人 |
D'SOUZA SANDEEP;HWANG LI-MING;JOSHI ANIRUDDHA;BHATTACHARYA SURYANARAYANA SHIVAKUMAR |
分类号 |
H01L21/265;H01L21/28;H01L21/8238;H01L29/51;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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