| 摘要 |
A method for manufacturing an x-ray detector comprises the steps of: preparing an insulating substrate; forming a gate and a pad on the insulating substrate; forming a gate insulating film, an amorphous silicon layer and an etch stopper over the insulating substrate, inclusive of the gate and the pad; simultaneously forming a channel layer, an ohmic contact layer and a source/drain over the gate insulating film, inclusive of the etch stopper, and a common electrode over a proper portion of the gate insulating film; forming a first storage electrode over the gate insulating film, inclusive of the common electrode; forming a protective layer over the entire structure of the insulating substrate on which the source/drain and the first storage electrode have been formed, and subsequently forming a contact hole and via holes over a proper portion of the protective layer; and forming a second storage electrode over the protective layer. By this method, the conventional eight masking steps are reduced to six masking steps, and as a result, simplification of the manufacturing process of the x-ray detector is accomplished, thus resulting in reduction of production costs and enhancement of productivity is accomplished by minimizing the possibility of occurrence of inferior products.
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