发明名称 |
Semiconductor laser device and manufacturing method thereof |
摘要 |
An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.
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申请公布号 |
US6654397(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20010941663 |
申请日期 |
2001.08.30 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TAKEUCHI KUNIO;HIROYAMA RYOJI;OKAMOTO SHIGEYUKI;TOMINAGA KOJI;NOMURA YASUHIKO;INOUE DAIJIRO |
分类号 |
H01S5/042;H01S5/16;H01S5/223;H01S5/30;H01S5/343;(IPC1-7):H01S5/00;H01S3/04 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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