发明名称 |
Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface |
摘要 |
A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO)n and a second stratum of single unit cell layers of an oxide material designated as (A'BO3)m so that the multilayer film arranged upon the substrate surface is designated (AO)n(A'BO3)m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.
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申请公布号 |
US6652989(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20010910322 |
申请日期 |
2001.07.20 |
申请人 |
UT-BATTELLE, LLC |
发明人 |
MCKEE RODNEY A.;WALKER FREDERICK J. |
分类号 |
C30B23/02;C30B25/02;H01L21/28;H01L29/49;(IPC1-7):B32B9/00 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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