| 摘要 |
A nonvolatile semiconductor memory device has a memory cell array region in which a plurality of memory cells, each having first and second MONOS memory cells, is arranged. A plurality of bit lines extend in the first direction, each of the bit lines being connected with each of the plurality of memory cells. The first control gate and the second control gate are formed on one side and the other side of each of the plurality of bit lines, the first control gate being connected with one of two of the memory cells adjacent each other in the second direction and second control gate being connected with the other of the two memory cells. The first and second control gates are respectively formed on either sides of each of the plurality of bit lines. Ends of the first and second control gates are respectively connected by two continuous sections. Each of the bit lines has a projecting section on one end portion. The projecting section has a large-width region having a width greater than a width of each of the bit lines in a region in which the plurality of memory cells are formed.
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