发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of etching a semiconductor device preventing tapering of a gate electrode edge includes a main etching of an electrode or wiring material supported by a dielectric film at a semiconductor substrate surface to expose the dielectric film. After the main etching step, residues of the electrode or the wiring material by sequentially etching utilizing a first gas mixture including a halogen-containing gas and an additive gas suppressing etching of the dielectric film by the halogen-containing gas, and in a second gas mixture gas including the halogen-containing gas and the additive gas and having the additive gas amount in a larger concentration than the first gas mixture.
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申请公布号 |
US6651678(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20020124729 |
申请日期 |
2002.04.18 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHINTANI KENJI;TUDA MUTUMI;TANIMURA JUNJI;MARUYAMA TAKAHIRO;YOSHIFUKU RYOICHI |
分类号 |
H01L21/302;H01L21/28;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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