Silica glass crucible and method of fabricating thereof

摘要

A silica glass crucible 1 having alpha of 0.05 or less over a thickness of 0.5 mm or more from the inner surface of the silica glass crucible, alpha being obtained by dividing the fluorescent intensity integrated over a wavelength range of 4,000 cm<-1 >and 4,100 cm<-1 >by the fluorescent intensity integrated at a wavelength of 800 cm<-1 >where an SiO peak appears as determined by subjecting a section of the thickness of the silica glass crucible to laser Raman spectroscopy involving excitation by laser beam of 514 nm, and an OH group concentration of 100 ppm or less over the entire periphery beyond a thickness of at least 1.0 mm from the inner surface of the silica glass crucible. A process for the preparation of a silica glass crucible for withdrawing single silicon crystal which comprises supplying helium gas or argon gas at least into the interior of the crucible-shaped molded product, and then initiating or continuing arc fusion before the termination of which the supply of argon gas is suspended or the supplied amount of argon gas is reduced and the supply of hydrogen gas is initiated.