Method for fabricating GaN single crystal substrate

摘要

A method for fabricating a gallium nitride single crystal substrate is provided. The method involves: forming a GaN layer on the front side of a sapphire substrate; heating the sapphire substrate at a temperature of 600-1,000° C.; and separating the GaN layer from the sapphire substrate by radiating a laser onto the back side of the sapphire substrate. Before or after forming the GaN layer on the front side of the sapphire substrate, a silicon oxide layer may be formed on the back side of the sapphire substrate. In this case, the silicon oxide layer is removed from the back side of the sapphire substrate in a subsequent process. A high-quality GaN substrate having no crack is attained by the method.