| 发明名称 |
Semiconductor substrate, SOI substrate and manufacturing method therefor |
| 摘要 |
A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.
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| 申请公布号 |
US6653211(B2) |
申请公布日期 |
2003.11.25 |
| 申请号 |
US20020068988 |
申请日期 |
2002.02.11 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
UNNO AKIRA;YONEHARA TAKAO;FUKUI TETSURO;MATSUDA TAKANORI;WASA KIYOTAKA |
| 分类号 |
B81C1/00;C23C14/08;H01L21/20;H01L21/203;H01L21/76;H01L21/762;H01L21/8246;H01L21/8247;H01L27/105;H01L27/12;H01L29/788;H01L29/792;(IPC1-7):H01L21/20;H01L21/36;H01L21/302 |
主分类号 |
B81C1/00 |
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