发明名称 |
System LSI having a substrate-bias generation circuit with a substrate-bias control-value storage unit |
摘要 |
A system LSI including substrate-bias generation circuits for supplying substrate biases independent of each other to functional modules integrated in the system LSI, a substrate-bias control circuit for controlling the substrate-bias generation circuits and a substrate-bias control-value storage unit for storing control values to be supplied to the substrate-bias generation circuits. The control values stored in the substrate-bias control-value storage unit are set by carrying out a predetermined operation. As a result, it is possible to provide a device for implementing both a high-speed operation and low power consumption without lowering the yield and for finely controlling the power consumption during the operation.
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申请公布号 |
US6654305(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20020259777 |
申请日期 |
2002.09.30 |
申请人 |
HITACHI, LTD. |
发明人 |
TSUNODA TAKANOBU;NISHII OSAMU |
分类号 |
H01L21/822;G11C5/14;H01L21/8238;H01L27/04;H01L27/092;H03K19/00;H03K19/096;(IPC1-7):G11C7/00 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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