发明名称 System LSI having a substrate-bias generation circuit with a substrate-bias control-value storage unit
摘要 A system LSI including substrate-bias generation circuits for supplying substrate biases independent of each other to functional modules integrated in the system LSI, a substrate-bias control circuit for controlling the substrate-bias generation circuits and a substrate-bias control-value storage unit for storing control values to be supplied to the substrate-bias generation circuits. The control values stored in the substrate-bias control-value storage unit are set by carrying out a predetermined operation. As a result, it is possible to provide a device for implementing both a high-speed operation and low power consumption without lowering the yield and for finely controlling the power consumption during the operation.
申请公布号 US6654305(B2) 申请公布日期 2003.11.25
申请号 US20020259777 申请日期 2002.09.30
申请人 HITACHI, LTD. 发明人 TSUNODA TAKANOBU;NISHII OSAMU
分类号 H01L21/822;G11C5/14;H01L21/8238;H01L27/04;H01L27/092;H03K19/00;H03K19/096;(IPC1-7):G11C7/00 主分类号 H01L21/822
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