| 摘要 |
For efficiently forming a semiconductor element with excellent adhesion and environment resistance, a semiconductor element forming method is configured to have a step of forming a plurality of pin junctions of a silicon-based material on a substrate by a high-frequency plasma CVD process under a pressure of not more than atmospheric pressure, and the method further has a step of forming a p-layer, an i-layer, and a portion of an n-layer of a first pin junction of the pin junctions or forming an n-layer, an i-layer, and a portion of a p-layer of a first pin junction of the pin junctions, and thereafter exposing the p-layer or the n-layer exposed in the surface, to an oxygen-containing atmosphere; a step of forming on the p-layer or the n-layer as exposed to the oxygen-containing atmosphere a layer of the same conductivity type as that of the p-layer or the n-layer; and a step of forming an n-layer or a p-layer of a second pin junction adjacent to the first pin junction to form a pn interface.
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