| 摘要 |
A semiconductor memory device employs an adaptive output driver to vary the strength of the output driver with the variation in external voltage and temperature. For this purpose, the semiconductor memory device with the adaptive output driver includes a shift register unit for producing a control signal so as to control the voltage level of the adaptive output driver, a data masking buffer for generating a reference voltage to be compared with the voltage level of the adaptive output driver, an adaptive output driver for varying its strength in response to the control signal provided from the shift register unit, and a comparator for comparing the reference voltage with the voltage level of the adaptive output driver to thereby generate a signal determining whether or not the shift register unit should perform a shift operation.
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