发明名称 |
Voltage generating circuits and methods including shared capacitors |
摘要 |
Integrated circuit voltage generating circuits include an integrated circuit substrate, a first voltage generating circuit in the integrated substrate that is configured to generate a first voltage from a power supply voltage, and a second voltage generating circuit in the integrated circuit substrate that is configured to generate a second voltage that is different from the first voltage from the power supply voltage. A shared capacitor in the integrated circuit substrate is connected to both the first voltage generating circuit and to the second voltage generating circuit. The shared capacitor is used by the first voltage generating circuit and the second voltage generating circuit, to generate the first and second voltages.
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申请公布号 |
US6653889(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20020188927 |
申请日期 |
2002.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG SEONG-JIN;JUN YOUNG-HYUN |
分类号 |
G11C11/413;G11C5/14;G11C16/06;H02M3/07;(IPC1-7):G05F1/10 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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