发明名称 Double intracavity contacted long-wavelength VCSELs and method of fabricating same
摘要 A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.
申请公布号 US6653158(B2) 申请公布日期 2003.11.25
申请号 US20010935009 申请日期 2001.08.21
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 HALL ERIC M.;NAKAGAWA SHIGERU M.;COLDREN LARRY A.
分类号 H01S5/024;H01S5/042;H01S5/183;H01S5/30;H01S5/323;H01S5/343;(IPC1-7):H01L21/00 主分类号 H01S5/024
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