发明名称 |
Flash memory with controlled wordline width |
摘要 |
A method of manufacturing for a MirrorBit(R) Flash memory includes depositing a charge-trapping material over a semiconductor substrate and implanting first and second bitlines in the semiconductor substrate. A wordline material is deposited over the charge-trapping dielectric material and a hard mask material deposited thereon. An anti-reflective coating (ARC) material is deposited on the hard mask material and a photoresist material is deposited on the ARC followed by processing the photoresist material and the ARC material to form a photomask of a patterned photoresist and a patterned ARC. The hard mask material is processed using the photomask to form a hard mask. The patterned photoresist is removed and then the patterned ARC without damaging the hard mask or the wordline material. The wordline material is processed using the hard mask to form a wordline and the hard mask is removed without damaging the wordline or the charge-trapping material.
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申请公布号 |
US6653190(B1) |
申请公布日期 |
2003.11.25 |
申请号 |
US20010023436 |
申请日期 |
2001.12.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YANG JEAN Y.;GHANDEHARI KOUROS;KAMAL TAZRIEN;NGO MINH VAN;RAMSBEY MARK T.;HOPPER DAWN M.;HUI ANGELA T.;BELL SCOTT A. |
分类号 |
H01L21/8246;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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