| 摘要 |
PURPOSE:To prevent the sagging of a metallic small-gage wire by forming a second insulating layer having a thick 'layer onto the peripheral section of a connection region. CONSTITUTION:A first insulating layer 5 is composed of silicon nitride, etc., and formed onto the surface of a substrate 1 through a CVD method, etc., within a range except a light-emitting region 4, and layer thickness is thinned as 0.05-0.3mum. An electrode 6 consists of aluminum, etc., is brought into ohmic- contact with the light-emitting region 4 and is formed onto the first insulating layer 5 through evaporation, etc., and has connection regions 7a-7f for bonding wires. A second insulating layer 8 is made up of an organic insulating material such as a polyimide polymer, and formed onto the electrode 6 including at least connection-region peripheral sections 9a-9f within a range except the connection regions 7a-7f of the electrode and a section near the light-emitting region 4. The upper section of the electrode 6 is spinner-coated with the second insulating layer 8, photolithography is conducted, and the insulating layer 8 is heated and cured at approximately 350 deg.C, thus obtaining a thick film. Layer thickness is shaped thickly as 1-3mum. Accordingly, the sagging of a metallic-gage wire can be prevented. |
