| 摘要 |
A method and structure for an integrated circuit structure that includes introducing precursors on a substrate, oxidizing the precursors and heating the precursors. The introducing and the oxidizing of the precursors is preformed in a manner so as to form an amorphous glass dielectric on the substrate. The process preferably includes, before introducing the precursors on the substrate, cleaning the substrate. The introducing of precursors is performed in molar ratios consistent with formation of glass films and may comprise an atomic level chemical vapor deposition of La2O3 and Al2O3 using ratios between 20%-50% La2O3 and 50%-80%
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