发明名称 |
Nitride semiconductor device |
摘要 |
The nitride semiconductor device includes: a substrate made of a III-V group compound semiconductor containing nitride; and a function region made of a III-V group compound semiconductor layer containing nitride formed on a main surface of the substrate. The main surface of the substrate is tilted from a {0001} plane by an angle in a range of 13° to 90° inclusive.
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申请公布号 |
US6653663(B2) |
申请公布日期 |
2003.11.25 |
申请号 |
US20000729424 |
申请日期 |
2000.12.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIDA MASAHIRO |
分类号 |
H01L33/16;H01L33/32;H01S5/32;H01S5/323;(IPC1-7):H01L27/15;H01L33/00;H01L31/036 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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