发明名称 Semiconductor memory device, method for controlling same, and electronic information apparatus
摘要 A semiconductor memory device of the present invention includes: a time measurement section for measuring a critical amount of time for the memory cells to hold data; a plurality of memory circuits each storing refresh information which indicates that a corresponding memory bank is refreshed; a refresh address designation section for designating a refresh address in the corresponding memory bank; and a refresh control section for controlling the refresh operation with respect to each of the memory banks according to the designated refresh address and determining an unrefreshed memory bank based on the refresh information so as to perform the refresh operation with respect to the determined unrefreshed memory bank.
申请公布号 US6654303(B2) 申请公布日期 2003.11.25
申请号 US20020167806 申请日期 2002.06.11
申请人 SHARP KABUSHIKI KAISHA 发明人 MIYAMOTO YASUO;TAKATA HIDEKAZU
分类号 G11C11/403;G11C11/406;G11C11/4078;(IPC1-7):G11C7/00 主分类号 G11C11/403
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