发明名称 HIGH-FREQUENCY IC CONNECTION STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To reduce a size of a device without deteriorating characteristics of the device when connecting a high-frequency IC. <P>SOLUTION: A high-frequency IC connection structure comprises a housing 3 having a top face 3a and a bottom face 3b, a through hole 9 which is extended through the top face 3a and the bottom face 3b of the housing 3, a cylindrical dielectric body 2 inserted into the through hole 9, and a connection pin 1 which is inserted into the through hole 9 in a surrounded state by the dielectric body 2, and which has a holding section 1a for holding a high-frequency signal input/ output pin 4 of the high-frequency IC 5 at edges on the top face 3a and bottom face 3b sides. The holding section 1a of the connection pin 1 is so structured as to elastically hold the high-frequency signal input/output pin 4 of the high-frequency IC 5. A matching circuit may be formed by forming the dielectric body 2 from a plurality of dielectric materials 2 and 8 having different dielectric constants. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003332487(A) 申请公布日期 2003.11.21
申请号 JP20020138117 申请日期 2002.05.14
申请人 NEC ENGINEERING LTD 发明人 KUROSE SHINYA
分类号 H01R13/11;H01L23/12;H01P1/00;H01R13/6477;H01R13/648;H01R13/658;H01R31/06 主分类号 H01R13/11
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