| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for reducing contact resistance when an ohmic electrode is formed of a semiconductor with a large band gap. <P>SOLUTION: A first film consisting of rare earth metal is formed on a surface of a semiconductor region of a substrate to which the semiconductor region formed of a compound semiconductor is exposed. A second film comprising silicon as a main component is formed on a surface of the first film. The first film and the second film are heated and a part which is brought into contact with the second film in the first film is silicided. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2003332259(A) |
申请公布日期 |
2003.11.21 |
| 申请号 |
JP20020133056 |
申请日期 |
2002.05.08 |
| 申请人 |
FUJITSU LTD |
发明人 |
IKEDA KEIJI;YAMASHITA YOSHIMI |
| 分类号 |
H01L21/28;H01L21/285;H01L21/331;H01L21/338;H01L29/20;H01L29/45;H01L29/737;H01L29/778;H01L29/812;H01L33/20;H01L33/32;H01L33/40 |
主分类号 |
H01L21/28 |
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