发明名称 |
PLASMA TREATMENT APPARATUS AND METHOD THEREFOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To produce uniform plasma with high density, by providing an antenna having a plurality of power supply points controlled in their phases. <P>SOLUTION: There is provided an etching apparatus, capable of producing uniform plasma with high density by introducing high-frequency waves having the electric component perpendicular to the center axis of the apparatus by making use of an antenna, having a plurality of electric power supply points which are phase-controlled. Uniform plasma with high density is formed by preventing the electric field from concentrating in the neighborhood of the central axis of the apparatus. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2003332320(A) |
申请公布日期 |
2003.11.21 |
申请号 |
JP20020228209 |
申请日期 |
2002.08.06 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
TAMURA HITOSHI;WATANABE SEIICHI |
分类号 |
H05H1/46;B01J19/08;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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