发明名称 PLASMA TREATMENT APPARATUS AND METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To produce uniform plasma with high density, by providing an antenna having a plurality of power supply points controlled in their phases. <P>SOLUTION: There is provided an etching apparatus, capable of producing uniform plasma with high density by introducing high-frequency waves having the electric component perpendicular to the center axis of the apparatus by making use of an antenna, having a plurality of electric power supply points which are phase-controlled. Uniform plasma with high density is formed by preventing the electric field from concentrating in the neighborhood of the central axis of the apparatus. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003332320(A) 申请公布日期 2003.11.21
申请号 JP20020228209 申请日期 2002.08.06
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TAMURA HITOSHI;WATANABE SEIICHI
分类号 H05H1/46;B01J19/08;H01L21/3065 主分类号 H05H1/46
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