| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for shortening time for preparing a wafer by cutting a monocrystal ingot, and for obtaining much more thin wafers from the ingot. <P>SOLUTION: A lattice defect occurs on a surface of a monocrystal ingot 10 in a crystal orientation by implanting an ion beam 23 and in a portion where the lattice defect is generated on the surface of the ingot 10, a cleavage is generated by imparting shock by raising a knife edge. Then, the ingot is cut into thin plate with a cleaved face as a cross section. <P>COPYRIGHT: (C)2004,JPO</p> |
