| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the throughput and manufacturing yield of a method of inspecting resist pattern by acquiring the information on the presence/absence of peeling and a proper exposure condition with a simple constitution. <P>SOLUTION: A dimension correction mark 1 composed at least of one pair of dimension correction mark patterns 2-5 is formed on a mask and, at the same time, transferred onto a resist film provided on a wafer. Then the intervals S<SB>m1</SB>between the end sections of the paired dimension correcting mark patterns 2-5 on the mask are measured and, at the same time, the intervals Sri between the end sections of the one pair of dimension correction mark patterns 7-10 formed on the resist film by developing the transferred patterns are measured. Thereafter, the occurrence of peeling in the resist patterns is detected from the difference between the intervals S<SB>m1</SB>and S<SB>r1</SB>. <P>COPYRIGHT: (C)2004,JPO</p> |
