| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodiode having an element structure for improving a frequency response and a saturated output while assuring effective internal quantum efficiency and a CR time constant. SOLUTION: The photodiode comprises: a p-type first semiconductor layer; and n-type second semiconductor layer; a third semiconductor layer interposed between the semiconductors and having a low doping concentration; and a p-type fourth semiconductor layer having larger band gap energy than that of the first layer arranged at the opposite side of the third layer brought into contact with the first layer. In this photodiode, the band gap energy is set so that only the first layer functions as an optical absorption layer, and the doping concentration is set so that the third layer functions as a depleted carrier running layer. COPYRIGHT: (C)2004,JPO
|
