| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device whereby a capacitor of a large scale can be secured by using a small area. SOLUTION: A plurality of word lines WL1, WL2, WL3 and WL4 of a DRAM cell array are connected with a terminal VWL in common among them, and bit lines BL1, BL2 are connected with a terminal VBL in common among them, and further, a plurality of cell-plate wirings BLX1, BLX2 connected with the terminals MP of DRAM cells 41 are connected with a terminal VMP. A power- supply potential VDD is given to the connection terminal VBL of the bit lines, and ground potential VSS is given to the connection terminal VMP of the cell-plate wirings. To the connection terminal VWL of the word lines, there is given potential exceeding the power-supply potential VDD by potential not smaller than the threshold voltage of each NMOS transistor 411 of the transfer gate of each DRAM cell 41 to bring always the NMOS transistor 411 into an ON-state. Thereby, capacitors 412 of all the DRAM cells 41 so serve as smoothing capacitors between the potentials VDD and VSS as to make securable easily the smoothing capacitor of a large scale by using a small area. COPYRIGHT: (C)2004,JPO
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