MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for highly accurately regulating the FET characteristics of a power amplifier without making regeneration due to overshoot impossible by utilizing gate voltage measurement even when initial drain current measurement is impossible due to the variation of characteristics in respective components. SOLUTION: The trimming condition of a circuit element for regulating the drain current of a bias circuit for the power amplifier provided with the bias circuit for supplying a gate voltage to the gate of the FET is monitored by switching into gate voltage measurement during a period wherein the measurement of the initial drain current is impossible. When the drain current measurement has become possible, the FET characteristic regulation of the power amplifier is effected by applying function trimming while monitoring the trimming condition by switching to the drain current measurement again. COPYRIGHT: (C)2004,JPO