| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, in which the occurrence of a leakage current at the edge portion of an element isolation insulating film is prevented. <P>SOLUTION: This semiconductor device comprises the element isolation insulating film 2 formed in a SOI layer 13 interposing an element-forming region, source/drain regions 8a, 8b formed in the element-forming region interposing a channel region, and titanium silicide films 40 formed on the source/drain regions 8a, 8b spacing away from the element isolation insulating film 2. In this structure, the titanium silicide film 40 is not formed on the entire edge portion of the element isolation insulating film 2. <P>COPYRIGHT: (C)2004,JPO |
